 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| SavantIC Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION *With TO-3PN package *High voltage ,high speed APPLICATIONS *Switching regulators *Inverters *Solenoid and relay drivers *Deflection circuits PINNING (See Fig.2) PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION BUV48 BUV48A Fig.1 simplified outline (TO-3PN) and symbol Absolute maximum ratings(Ta=25 ) SYMBOL VCBO PARAMETER BUV48 Collector-base voltage BUV48A BUV48 VCEO VEBO IC ICM IB IBM PT Tj Tstg Collector-emitter voltage BUV48A Emitter-base voltage Collector current Collector current-peak Base current Base current-peak Total power dissipation Junction temperature Storage temperature TC=25 Open collector Open base 450 7 15 30 5 20 150 150 -65~175 V A A A A W Open emitter 1000 400 V CONDITIONS VALUE 850 V UNIT THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance from junction to case MAX 1.0 UNIT /W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER BUV48 IC=0.2A ; IB=0; L=25mH BUV48A IE=50mA; IC=0 IC=10A; IB=2A TC=100 IC=8A ;IB=1.6A TC=100 IC=15A ;IB=3A CONDITIONS SYMBOL BUV48 BUV48A MIN 400 TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage V 450 7 1.5 2.0 1.5 2.0 V VEBO(BR) Emitter-base breakdown voltage BUV48 BUV48A BUV48 BUV48A BUV48 BUV48A VCEsat-1 Collector-emitter saturation voltage V VCEsat-2 Collector-emitter saturation voltage 5.0 IC=12A ;IB=2.4A IC=10A; IB=2A TC=100 IC=8A ;IB=1.6A TC=100 VCEX=rated VCES; VBE(off)=1.5V TC=125 VEB=5V; IC=0 BUV48 IC=10A ; VCE=5V 8 BUV48A IC=8A ; VCE=5V IE=0 ; VCB=10V,f=1MHz 350 V VBEsat Base-emitter saturation voltage 1.6 V ICEX IEBO Collector cut-off current Emitter cut-off current 0.2 2.0 0.1 mA mA hFE DC current gain COB Output capacitance pF Switching times resistive load td tr ts tf Delay time Rise time Storage time Fall time 0.1 0.4 1.3 0.2 0.2 0.7 2.0 0.4 s s s s for BUV48 IC=10A ;IB1=2A; VCC=300V VBE(off)=5V for BUV48A IC=8A ;IB1=1.6A; VCC=300V VBE(off)=5V 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE BUV48 BUV48A Fig.2 Outline dimensions 3 |
Price & Availability of BUV48
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |